Publication | Closed Access
Effects of O vacancies and C doping on dielectric properties of ZrO2: A first-principles study
50
Citations
13
References
2006
Year
Materials ScienceMaterials EngineeringDielectric PropertiesIi-vi SemiconductorEngineeringFirst-principles StudyNanoelectronicsOxide ElectronicsCarbon DopingApplied PhysicsMicrowave CeramicDielectric ResponseSemiconductor MaterialElectronic PropertiesElectrical PropertyO Vacancies
The authors determine electronic properties, structural stability, and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and carbon doping (C doping) using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. They find significantly enhanced static dielectric response in zirconia with oxygen vacancies arising from a softened phonon mode. They also find that effects of carbon doping on the dielectric response are anisotropic.
| Year | Citations | |
|---|---|---|
Page 1
Page 1