X-Ray Studies of Semiconductor Superlattices Grown by Molecular Beam Epitaxy

Abstract

X-ray diffraction measurements of semiconductor superlattices grown by molecular beam epitaxy (MBE) have been carried out. Alternating monolayer growth of GaAs and AlAs has been confirmed by detecting the reflections at Brillouin zone boundaries in the reciprocal space. In strained GaAs–Ga 1- x In x As superlattices the tetragonal distortion is found and the tetragonality is independent of the thickness of the strained layer but increases with decreasing thickness of the GaAs layer. The X-ray study of the interdiffusion in the superlattice has been also carried out.