On the dislocation mechanism of amorphization of Si by indentation

Abstract

The formation of an amorphous phase underneath a Vickers indentation produced on a Si(001) surface at room temperature has been observed by cross-sectional transmission electron microscopy. Two types of location are observed for the amorphous phase. One is formed just underneath the image of the indentation and the other is parallel to the slip planes of Si. It is concluded that the latter type, at least, is formed as a result of activation of dislocations which is induced by an external shear stress combined with a hydrostatic pressure.