n -type doping of (001)-oriented single-crystalline diamond by phosphorus

Abstract

n -type doping of (001)-oriented single-crystalline diamond has been achieved using PH3 as doping gas and applying a newly optimized homoepitaxial growth technique based on plasma-enhanced chemical vapor deposition. Hall-effect measurements indicate n-type conductivity with highest mobilities of ∼350cm2∕Vs. Phosphorus doping is confirmed by secondary-ion mass spectroscopy.