Room temperature fabrication of p-channel Cu₂O thin-film transistors on flexible polyethylene terephthalate substrates

Abstract

The effects of growth temperature on the microstructure evolution and electrical transport properties of Cu2O films were investigated. Nanocrystalline Cu2O films with modest p-type semiconducting properties (Hall mobilities ∼20 cm2/Vs, hole concentrations ∼1016 cm−3) were successfully prepared at room temperature without post-annealing. Bottom gate and top contact p-channel Cu2O thin-film transistors (TFTs) were constructed on flexible polyethylene terephthalate substrates at room temperature, which shows superior transfer performance (field effect mobility ∼2.40 cm2/Vs and current on/off ratio ∼3.96 × 104). The low processing temperature and the good electrical performance of the p-type Cu2O TFTs suggest their good potential for applications in high-throughput and low-cost electronics.