Concentration and Magnetic-Field Dependence of Spin-Flip Magneto-Raman Scattering

Abstract

A population-limited intensity of the spin-flip line in Stokes scattering from $n$-type semiconductors is calculated on the basis of virtual hole-electron transitions between valence and conduction bands. For donor concentrations $N$ such that the Fermi energy ${E}_{F}$ is less than the spin-flip energy $\ensuremath{\hbar}{\ensuremath{\omega}}_{s}$, the intensity is proportional to $N$ and independent of the magnetic field $H$. For $\ensuremath{\hbar}{\ensuremath{\omega}}_{s}<{E}_{F}<\frac{e\ensuremath{\hbar}H}{{m}^{*}c}$ (= cyclotron energy), the intensity is proportional to ${H}^{3}{N}^{\ensuremath{-}1}$. Its behavior with increasing ${E}_{F}$ is predicted to be quasiperiodic, with a period $\ensuremath{\hbar}{\ensuremath{\omega}}_{c}$. The radiation-frequency dependence is described by a Wolff-type enhancement factor.