Fundamental characteristics of an InGaAsP/InP laser transistor

Abstract

We have demonstrated a novel heterostructure device with functions of both a semiconductor laser and a heterojunction bipolar transistor, which is applicable to highly multifunctional optoelectronic integrated circuits. It can control both lasing power and output current. CW operation of the InGaAsP/InP transverse current injection laser at around room temperature has been achieved for the first time.