Growth of horizontally aligned dense carbon nanotubes from trench sidewalls

Abstract

Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNT cantilevers/bridges were grown from selected trench sidewalls in silicon substrate by chemical vapor deposition (CVD). The as-grown CNT cantilevers/bridges are packed with multiwalled carbon nanotubes (MWCNTs) with a linear density of about 10 CNTs µm(-1). The excellent horizontal alignment of these CNTs is mainly ascribed to the van der Waals interactions within the dense CNT bundles. What is more, the Raman intensity ratio I(G)/I(D) shows a gradual increase from the CNT roots to tips, indicating a defect gradient along CNTs generated during their growth. These results will inspire further efforts to explore the fundamentals and applications of HADCNTs.