Publication | Closed Access
Erosion of Silicon Single Crystals
46
Citations
9
References
1980
Year
EngineeringSilicon On InsulatorAngular Al 2Si Single CrystalsMaterials SciencePhysicsCrystalline DefectsSolid MechanicsDefect FormationSurface FinishMicrostructureSilicon DebuggingSurface CharacterizationDislocation InteractionSurface ScienceApplied PhysicsSilicon Single CrystalsSteady‐state Erosion RateAmorphous SolidMechanics Of Materials
The erosion of Si single crystals by angular Al 2 O 3 particles was investigated over a range of particle diameters D (23 to 270 μm), velocities v (32 to 134 m/s), and impact angles α (22° to 90°). For α≥45°, the steady‐state erosion rate can be described within the framework of existing models by the modified relation ΔW∞( v sin α‐ v 0 ) 2.6 ( D‐D 0 ) 0.6 . The results are consistent with the relation D 0 v = Dv 0 2200 × 10 −6 m 2 /s for the threshold values D 0 and v 0 . For α=22°, another term must be added, and could represent a contribution of plasticity. The results also indicate that surface morphology and/or subsurface‐damage structures are important.
| Year | Citations | |
|---|---|---|
Page 1
Page 1