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Complete Process Modeling for VLSI Multilayer Structures
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1985
Year
Device ModelingElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignOxidation‐enhanced DiffusionVlsi ArchitectureAdvanced SupremApplied PhysicsComputer EngineeringComputer ArchitectureComplete Process ModelingSemiconductor Device FabricationModeling And SimulationIntegrated CircuitsImpurity DiffusionSemiconductor DeviceMultiscale Modeling
A new one‐dimensional process simulator, ASPREM or advanced SUPREM, has been developed. ASPREM features the capability for multilayer structures and the incorporation of many up‐to‐date models. In this paper, general features of ASPREM are first described. Then details of many up‐to‐date models, such as oxidation‐enhanced diffusion with or without polysilicon, impurity diffusion in polysilicon and , and stress effects to phosphorus diffusion after high dose ion implantation are reported with experimental results. Finally, applications to base‐emitter self‐aligned technology (BEST) transistors are described, followed by brief concluding remarks.