A High‐Efficiency Solution‐Deposited Thin‐Film Photovoltaic Device

Abstract

High-quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).