Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition - Concepedia

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Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition

15

Citations

10

References

2008

Year

Tsung‐Shine Ko, T. C. Wang, H. M. Huang, J. R. Chen, H. G. Chen, C. P. Chu, Tien‐Chang Lu, Hao‐Chung Kuo, S. C. Wang

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v SemiconductorA-plane GanSinx Insertion Layer

References

	Year	Citations

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