Publication | Closed Access
Electrical resistivity of icosahedral Mg-Al-Zn alloys
22
Citations
10
References
1987
Year
EngineeringBismuth-based SuperconductorsMagnetic MaterialsSample GeometryMagnetoresistanceMagnetismMagnetoresistance MeasurementsSuperconductivityQuantum MaterialsMaterials EngineeringMaterials ScienceElectrical EngineeringPhysicsCrystalline DefectsLight MetalElectrical PropertySolid-state PhysicMicrostructureSpecific ResistanceNatural SciencesCondensed Matter PhysicsApplied PhysicsDisordered Quantum SystemElectrical Resistivity
The temperature and magnetic field dependence of the electrical resistivity has been measured on single-phase icosahedral ${\mathrm{Mg}}_{32}$(${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Zn}}_{\mathrm{x}}$${)}_{49}$ at x=0.5 and x=0.69. For temperatures between 4 and 20 K the observed behavior is found to agree quantitatively with the theories of quantum corrections to electron transport in disordered conductors. By fitting the magnetoresistance measurements to these theories, we can determine the resistivity in a way which is independent of the sample geometry, and we find that it shows a remarkably strong dependence on the alloy composition.
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