Amorphous Visible-Light Thin Film Light-Emitting Diode Having a-SiN:H as a Luminescent Layer

Abstract

Hydrogenated amorphous silicon nitride (a-SiN:H) has been applied for the first time as a luminescent active layer (i-layer) in an amorphous visible-light thin film light-emitting diode (TFLED). The TFLED has the structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. Visible red and yellow emissions can be observed at room temperature from the TFLEDs in which the optical energy gap of i-a-SiN:H is larger than 2.4 eV. The brightness of the red TFLED was 0.5 cd/m 2 , with a forward injection current density of 2000 mA/cm 2 for the 0.033 cm 2 cell area.