Applied Physics Letters · 2006 · 145 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologyOptical MaterialsChemical Vapor DepositionRaman SpectroscopySemiconductor NanomaterialsSemiconductor PhysicsSilicon MaterialsThin Film Optical PropertiesLight-emitting DevicesNear-infrared EmissionOptical PropertiesPhotoluminescencePhotoluminescence SpectroscopyPlasma-enhanced Chemical Vapor DepositionSilicon NitrideStokes Shift
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500–900°C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices.
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Optical gain in silicon nanocrystals
Lorenzo Pavesi, Luca Dal Negro, Cláudio Mazzoleni et al. · Nature · 2000 · 2.3K citations