Light emission from silicon-rich nitride nanostructures

Abstract

Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500–900°C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices.