Diluted magnetic semiconductor of <i>p</i>-type GaN epilayers implanted with Mn+ ions

Abstract

The study of diluted magnetic semiconductor based on GaN was performed employing a variety of various measurement techniques. p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and were subsequently implanted with Mn+ ions. The properties of Mn+ ion-implanted GaN epilayers were investigated with optical and magnetic measurements. The results of photoluminescence (PL) measurement show that optical transitions related to Mn apparently appear at 2.5 and around 3.0 eV. It is confirmed that the PL peak at 2.5 eV is a donor-Mn acceptor transition and the PL peak around 3.0 eV is a conduction band-Mn acceptor transition. Ferromagnetic hysteresis loop was observed, and the temperature dependent-magnetization displayed a ferromagnetic behavior persisting up to ∼270 K.