InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Abstract

InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the band alignment indicate that it is ideal for fabricating n-p-n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon-doped bases having an ft and fmax of 30 and 45 GHz, respectively.