Applied Physics Letters · 1996 · 14 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsMaterials CharacterizationSolid State PhysicsCrystal LatticeCrystal PlanesCrystallographyEpitaxial GrowthX-ray CrystallographyX-ray DiffractionBuffer LayersCrystallographic CharacterizationEpitaxial Film GrowthEpitaxial MaterialsGrazing-incidence X-ray DiffractionLaves PhasesPulsed Laser DepositionReflection High-energy Electron Diffraction
YCo2 and TbCo2 Laves phase compounds were epitaxially grown on (110) W buffer layers by pulsed laser deposition at a base pressure of 5×10−10 Torr and a substrate temperature of 500 °C. The films were characterized in situ by reflection high-energy electron diffraction, and after deposition by grazing-incidence x-ray diffraction and scanning electron microscopy. The relative orientation of the RCo2(111), where R=Y or Tb, and the W(110) planes was found to be unlike any previously observed relationship between fcc and bcc materials. Two in-plane crystallographic domains of RCo2(111) have been pointed out and are discussed in terms of geometrical lattice matching.