High modulation efficiency of intracavity contacted vertical cavity lasers

Abstract

A very high current modulation efficiency of 5.7 GHz/√(mA) has been demonstrated in a low threshold (0.85 mA) InGaAs vertical-cavity surface-emitting laser. These top surface emission devices have been fabricated with intracavity contacts on semi-insulating substrates to realize their high speed potential. Data is presented for various laser diameters. Modulation bandwidths up to 9.3 GHz at a bias of only 4.5 mA have been measured for 7 μm diameter lasers. Derived parameters indicate that considerably higher bandwidths should be possible with better heat dissipation and modified cavity designs.