IEEE Photonics Technology Letters · 2013 · 38 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBlue Light-emitting DiodesCurrent Injection EfficiencyEfficiency DroopGallium Nitride (Gan) MaterialsLight-emitting DevicesMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionPower Output
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~ 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
16
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
P. Kozodoy, Monica Hansen, Steven P. DenBaars et al. · Applied Physics Letters · 1999 · 275 citations