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Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and low damping
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1991
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PhotonicsRidge Waveguide LasersEngineeringQuantum DeviceApplied PhysicsSingle QuantumCompression FactorsIngaas/gaas LasersQuantum Photonic DeviceGain Compression FactorOptoelectronicsHigh-power LasersOptical AmplifierLow Damping
Strained In0.2Ga0.8As/GaAs single quantum well polyimide buried ridge waveguide lasers with 3 dB modulation bandwidths of 15 GHz and gain compression factors ɛ as small as 9.98 × 10−18cm−3 have been fabricated. We have also observed that the gain compression factor is not larger than in lasers with bulk active areas, and is lower for structures with a smaller number of wells and shorter cavity lengths.
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