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In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors
59
Citations
16
References
2006
Year
SemiconductorsMaterials ScienceMicrophotoluminescence ImageWide-bandgap SemiconductorEngineeringSemiconductor TechnologyPhysicsPhotoluminescenceApplied PhysicsIn-plane Bandgap EngineeringIn‐plane Bandgap EngineeringAluminum Gallium NitrideWide-bandgap SemiconductorsHydrogen IrradiationCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
In-plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported.
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