Transition metal-doped TiO₂and ZnO—present status of the field

TLDR

Diluted magnetic semiconductors, especially oxide‑based ones such as TiO₂ and ZnO doped with transition metals, have attracted significant interest due to reports of room‑temperature ferromagnetism. This review summarizes the current status of oxide‑based diluted magnetic semiconductors and examines how growth method, substrate choice, and temperature affect thin‑film microstructure and magnetic properties. The review outlines experimental conditions that yield large magnetization and high Curie temperatures, and evaluates proposed mechanisms for ferromagnetism against available data.

Abstract

There has been considerable recent interest in the design of diluted magnetic semiconductors, with a particular focus on the exploration of different semiconductor hosts. Among these, the oxide-based diluted magnetic semiconductors are attracting increasing attention, following reports of room temperature ferromagnetism in anatase TiO2 and wurtzite ZnO doped with a range of transition metal ions. In this review we summarize the current status of oxide-based diluted magnetic semiconductors, and discuss the influence of growth method, substrate choice, and temperature on the microstructure and subsequent magnetic properties of thin films. We outline the experimental conditions that promote large magnetization and high ferromagnetic Curie temperature. Finally, we review the proposed mechanisms for the experimentally observed ferromagnetism and compare the predictions to the range of available data.