Publication | Closed Access
Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High-Energy Neutrons
42
Citations
18
References
1967
Year
Semiconductor TechnologyIon ImplantationEngineeringPhysicsInsb SemiconductorsBias Temperature InstabilitySilicon DebuggingApplied PhysicsDamage RegionsHigh-energy NeutronsTime-dependent Dielectric BreakdownDefect FormationCarbon ReplicasRadiation ChemistryNeutron ScatteringMono-energetic 14-Mev NeutronsSemiconductor Device
Evidence is reported for the existence of damage regions in Si, GaAs, and InSb irradiated with mono-energetic 14-MeV neutrons. The regions were revealed by using a chemical etch and observing carbon replicas of the surface with an electron microscope.
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