Japanese Journal of Applied Physics · 1996 · 11 citations · 5 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSpectroscopySurface ScienceNanostructured SurfacesScanning Probe MicroscopySemiconductor SurfacesSurface CrystallographySurface PhysicsSurface SpectroscopyMicroscopyScanning Tunneling SpectroscopySurface Atomic StructureSurface Electronic StructureSurface Structure DeterminationUnit Cell GeometryUnit Cell ParametersVacancies
We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4×2/c(8×2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4×2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 ±0.01 nm.
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Structures of As-Rich GaAs(001)-(2 × 4) Reconstructions
Tomihiro Hashizume, Q. K. Xue, Jing Zhou et al. · Physical Review Letters · 1994 · 288 citations
Natural Sciences, Materials Engineering, Materials Science +17