A Clean GaP(001)4×2/c(8×2) Surface Structure Studied by Scanning Tunneling Microscopy and Ion Scattering Spectroscopy

Abstract

We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4×2/c(8×2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4×2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 ±0.01 nm.