Characteristics of a Field-Effect Transistor Fabricated with Electropolymerized Thin Film

Abstract

The preparation and characteristics of the solid-state field-effect transistor (FET) based on poly(p,p'-biphenol)(PBP) thin film prepared by electropolymerization of p,p'-biphenol are presented. The PBP-based FET displayed excellent drain current ( I D )-drain voltage ( V D ) characteristics for various gate voltages. The I D - V D characteristics were analyzed as in a conventional MOS transistor.