High‐Performance Top‐Gated Graphene‐Nanoribbon Transistors Using Zirconium Oxide Nanowires as High‐Dielectric‐Constant Gate Dielectrics

Abstract

A new strategy for integrating high-dielectric-constant (high-k) dielectrics with graphene nanoribbon (GNR) is presented. Freestanding zirconium oxide nanowires are synthesized and subsequently assembled on top of GNRs as high-k gate dielectrics for top-gated GNR transistors with unprecedented performance.