Publication | Closed Access
Instability in Molecular Beam Epitaxy due to Fast Edge Diffusion and Corner Diffusion Barriers
97
Citations
32
References
1999
Year
Materials ScienceEdge DiffusionPattern FormationEngineeringTunneling MicroscopyPhysicsFast Edge DiffusionDiffusion ResistanceSurface ScienceApplied PhysicsCondensed Matter PhysicsNumerical SimulationCorner Diffusion BarriersDiffusion ProcessMolecular Beam EpitaxyEpitaxial GrowthCharge Carrier Transport
Fast edge diffusion leads to a diffusion bias during molecular beam epitaxy. Kinetic Monte Carlo simulations on a solid-on-solid model incorporating fast edge diffusion clearly show pattern formation. Fast edge diffusion combined with an excess barrier to go past the outer corner of an island results in wavy steps, similar to the Bales-Zangwill instability, in the step flow growth regime. The evolution of surface morphology with fast edge diffusion and corner diffusion barriers is discussed in terms of the surface diffusion current.
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