Electronics Letters · 1993 · 23 citations · 4 references
EngineeringElectrical EngineeringPhysicsOptical MaterialsOptoelectronicsPhotonicsIon ImplantationLaser DiodesLaser OpticsLaser PhysicsSemiconductor LasersExternal Cavity Laser DiodesIon Implantation EffectsMode LockingMode-locked LasersPulsed LasersSemiconductor Laser DiodesUltra-short Pulse GenerationUltrafast Pulse Generation
230 fs, 25 W pulses are obtained from conventional mode-locked AlGaAs laser diodes with highly-reflecting external cavities. Uncoated commercial diodes are used with a region of saturable absorption created by ion implantation. The overall pulse performances are believed to be among the best reported from simple electrically-pumped laser diodes without using additional amplifier sections.
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Actively mode-locked semiconductor lasers
John E. Bowers, Paul A. Morton, A. Már et al. · IEEE Journal of Quantum Electronics · 1989 · 208 citations