Heterointerface Field Effect Transistor with 200 A-Long Gate

Abstract

AlGaAs/GaAs heterointerface field effect transistor (FET) with a gate-length comparable with electron de Broglie wavelength has been fabricated for the first time by the electron-beam-induced resist process, which demonstrates the possibility of `universal' FET. The transconductance maximum is found to be at the gate length three times as large as the channel depth.