Applied Physics Letters · 1996 · 24 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ScienceThin FilmsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthNucleationSurface PhysicsThin Film NucleationChemical Vapor Deposition NucleationEpitaxial Film GrowthEpitaxial Growth KineticsFilm Growth MechanismsIon-mediated NucleationSecondary NucleationSecondary Nucleation EffectsSubstrate Orientation Effects
A new phenomenon of diamond growth was observed. (001) oriented diamond layers can be grown on a (111) diamond face in a bias-assisted chemical vapor deposition process. The growth characteristics were investigated by means of scanning electron microscopy and Raman spectroscopy. It was found that, due to the ion bombardment, the epitaxial growth of the (111) diamond face was interrupted and a secondary nucleation occurred. This ion-bombardment-induced secondary nucleation leads to the growth of a top layer with a nonparallel orientation relationship with the substrate.