Radiation-hardened techniques for CMOS flash ADC

Abstract

This work presents a rad-hard 4-bit 10MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300krad.