Feasibility of an Electron-Based Crystalline Undulator

Abstract

The feasibility to generate powerful monochromatic radiation of the undulator type in the gamma region of the spectrum by means of planar channeling of ultrarelativistic electrons in a periodically bent crystal is proven. It is shown that to overcome the restriction due to the smallness of the dechanneling length, an electron-based crystalline undulator must operate in the regime of higher beam energies than a positron-based one does. A numerical analysis is performed for a 50 GeV electron channeling in Si along the (111) crystallographic planes.