Applied Physics Letters · 2003 · 75 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesSemiconductor Device MaterialsSemiconductor SurfacesSilicon MaterialsSolar Cell MaterialsSolar CellsAnnealingCrystalline Silicon Solar CellsHydrogen PassivationImpuritiesSilicon ImpuritiesSilicon PassivationSilicon Solar CellsSurface Hydrogenation Reactions
A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.
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