The Diffusion of Bismuth in Silicon

Abstract

The diffusion of bismuth into silicon from a spin-on source has been investigated at a temperature range of 1050–1200°C. The concentration profile of bismuth agrees with the complementary error function, and its diffusion coefficient shows a value similar to the values of phosphorus and boron. Its activation energy is estimated to be 2.50 eV. That is much smaller than the values of phosphorus, boron and arsenic.