Effect of Reactive Gas Dopants on the MgO Surface in AC Plasma Display Panels

Abstract

Experimental results are presented for the influence of controlled levels of important reactive impurities (N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> , O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> , H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O, CO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) on the aging characteristics of the operating voltages of ac plasma display panels. Details are also given of a novel method of modifying the electronic properties of MgO surfaces by discharge processing in an oxygen-doped Ne-0.1% Ar Penning mixture.