Publication | Closed Access
Preparation and properties of PLZT films from metallo-organic precursors
88
Citations
14
References
1989
Year
Optical MaterialsEngineeringDense PlztOptoelectronic DevicesThin Film Process TechnologyPlzt FilmsOptical PropertiesEpitaxial GrowthThin Film ProcessingMaterials ScienceMaterials EngineeringDielectric ConstantOptoelectronic MaterialsLead-free PerovskitesMaterial AnalysisElectronic MaterialsApplied PhysicsSpontaneous PolarizationThin FilmsFunctional Materials
Abstract Crack free and dense PLZT (8/65/35) films 0.4 to 2.5 μm thick were prepared by spinning a solution of metallo-organic compounds of lead, lanthanium, zirconium and titanium onto sapphire substrates, and firing and annealing the films in air in the range 600 to 850°C. These firing temperatures resulted in films with grain sizes from 0.2 to 1.2 μm. Films fired at 650°C had a dielectric constant of 1800 and a dissipation factor of 2% at 1 kHz, and a spontaneous polarization of 5 μC/cm2. The linear and quadratic electro-optic coefficients were 30 × 10−12 m/V and 50 × 10−18 (m/V)2, respectively.
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