Excited Acceptor States in II–VI and III–V Semiconductors

Abstract

Abstract Higher excited states of acceptors in CdTe, ZnTe, and GaAs are obtained by using the Baldereschi and Lipari spherical model including the cubic correction and the central‐cell effect. This is done by solving the coupled radial equations by the finite‐element method with Arnoldi's algorithm, which gives several (≈ 20) low‐lying states simultaneously. The procedure permits to determine very accurately the host band‐structure parameters. In the case of II–VI compounds, the Luttinger parameters γ 1 = 5.30, γ 2 = 1.62, γ 3 = 2.10 and the dielectric constant ϵ 0 = 9.3 for CdTe and, γ 1 = 3.80, γ 2 = 0.86, γ 3 = 1.32 and ϵ 0 = 9.4 for ZnTe are obtained. For GaAs, γ 1 = 7.20, γ 2 = 2.15, γ 3 = 3.05, and ϵ 0 = 12.49 are obtained.