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Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions
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Citations
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References
2004
Year
EngineeringC12a7 CrystalChemistryChemical DepositionIon ImplantationHot ImplantationThin Film ProcessingMaterials ScienceSolid-state IonicOxide ElectronicsAcceleration Voltage 300KvElectrical PropertyElectrochemistryMaterial AnalysisElectronic MaterialsApplied PhysicsThin FilmsFunctional MaterialsSite-selective Extrusion
Inert gas ion implantation (acceleration voltage 300kV) into polycrystalline 12CaO·7Al2O3 (C12A7) films was investigated with fluences from 1×1016 to 1×1017cm−2 at elevated temperatures. Upon hot implantation at 600°C with fluences greater than 1×1017cm−2, the obtained films were colored and exhibited high electrical conductivity in the as-implanted state. The extrusion of O2− ions encaged in the crystallographic cages of C12A7 crystal, which leaves electrons in the cages at concentrations up to ∼1.4×1021cm−3, may cause the high electrical conductivity. On the other hand, when the fluence is less than 1×1017cm−2, the as-implanted films are optically transparent and electrically insulating. The conductivity is enhanced and the films become colored by irradiating with ultraviolet light due to the formation of F+-like centers. The electrons forming the F+-like centers are photo released from the encaged H− ions, which are presumably derived from the preexisting OH− groups. The induced electron concentration is proportional to the calculated displacements per atom, which suggests that nuclear collision effects of the implanted ions play a dominant role in forming the electron and H− ion in the films. The hot ion implantation technique provides a nonchemical process for preparing electronic conductive C12A7 films.
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