Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

Abstract

Abstract. The carbon monoxide (CO) gas sensing properties of low-resistance heavily Ga-doped ZnO thin films were evaluated. The ZnO films with a thickness of 50 nm were deposited at 200 °C by ion plating. The electrical properties of the ZnO films were controlled by varying the oxygen assist gas flow rate during deposition. The CO gas sensitivity of ZnO films with Au electrodes was investigated in nitrogen gas at a temperature of 230 to 330 °C. CO gas concentration was varied in the range of 0.6–2.4% in nitrogen gas. Upon exposure to CO gas, the current flowing through the film was found to decrease. This response occurred even at the lowest temperature of 230 °C, and is thought to be the result of a mechanism different than the previously reported chemical reaction.