Pentacene Thin-Film Transistor with PVP-Capped High-k MgO Dielectric Grown by Reactive Evaporation

Abstract

Pentacene thin-film transistors operated at low voltages have been realized by employing hybrid dielectrics, poly(4-vinylphenol) (PVP)-capped . The film was deposited by reactive evaporation of magnesium in oxygen. The PVP layer plays a role in modifying the surface morphology of the layer, and the images of atomic force microscopy for the PVP-capped films show a root-mean-square roughness of . The hybrid dielectric has a dielectric constant of 7.05 with a dielectric strength. The fabricated pentacene organic thin-film transistors exhibit a mobility of , a threshold voltage of , and an on/off ratio of .