The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSb

Abstract

InSb layers have been epitaxially grown on (100) semi-insulating GaAs by plasma-assisted epitaxy (PAE) in hydrogen plasma at a temperature as low as 270°C. It was found that higher rf power should be applied to plasma for the epitaxial growth of InSb layers at lower temperatures than at higher temperatures, and when higher rf power is applied, the optimum Sb/In supply ratio to obtain PAE-InSb with electronic property comparable to those growrn at higher temperatures, shifts to lower value.