Temperature dependence of planar channeling radiation

Abstract

Peak energies and linewidths of 54-MeV electron planar channeling radiation from a silicon crystal have been measured as a function of temperature. Our measured peak energies are compared with our theoretical calculations to obtain a Debye temperature for silicon of 495\ifmmode\pm\else\textpm\fi{}10 K. This value is appreciably lower than the value of 543 K obtained from an x-ray diffraction measurement, but is in excellent agreement with the value of 500 K obtained recently from a measurement of axial channeling radiation.