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Buffer layer/film interactions in the growth of Tl2Ba2Ca1Cu2O<i>x</i> films on CeO2 buffered sapphire
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1995
Year
Superconducting MaterialEngineeringCrystal Growth TechnologyThin Film Process TechnologyChemistryCeo2 LayersSuperconductivityHigh Tc SuperconductorsThin Film ProcessingMaterials ScienceHigh-tc SuperconductivityTl2ba2ca1cu2ox FilmsTl2ba2ca1cu2ox Thin FilmsBuffer Layer/film InteractionsSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsChemical Vapor Deposition
Tl2Ba2Ca1Cu2Ox thin films have been grown on highly textured CeO2 layers deposited onto R-plane sapphire substrates. The Tl2Ba2Ca1Cu2Ox films have critical temperature (Tc) values around 95 K and current density (Jc) values up to 8×104 A/cm2. The films are c-axis oriented even though we have identified the formation of a polycrystalline BaCe(Tl)O3 layer by reaction between the buffer layer and the superconducting precursor during the thalliation process.