Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

Abstract

We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H2 concentration. Without the presence of H2, continuous graphene films are obtained with a mean sheet resistance of <350 Ω/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films.