Applied Physics Letters · 1988 · 50 citations · 6 references
Natural SciencesChemistryMaterials ScienceOptoelectronicsSemiconductor MaterialsThin FilmsNanoelectronicsRare-earth-doped MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsDoping StrategiesElectroluminescent MaterialsElectron-hole RecombinationNonradiative Energy TransferRare-earth-doped Thin FilmsThin-film Optoelectronic Materials
The effect of oxygen doping in ZnS:TbF thin-film electroluminescent (EL) devices has been studied. We concluded that the TbOF complex center is more efficient than the TbF complex center in ZnS thin-film EL devices. The improvement is attributed to the decreased nonradiative emission process of Tb and/or enlarged lattice distortions which generate electron-hole pairs efficiently at the Tb excitation site.
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