TbOF complex centers in ZnS thin-film electroluminescent devices

Abstract

The effect of oxygen doping in ZnS:TbF thin-film electroluminescent (EL) devices has been studied. We concluded that the TbOF complex center is more efficient than the TbF complex center in ZnS thin-film EL devices. The improvement is attributed to the decreased nonradiative emission process of Tb and/or enlarged lattice distortions which generate electron-hole pairs efficiently at the Tb excitation site.