Publication | Open Access
Interface electronic structure in a metal/ferroelectric heterostructure under applied bias
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Citations
29
References
2013
Year
Materials ScienceOxide HeterostructuresElectrical EngineeringInterface StructureEngineeringEffective Barrier HeightFerroelectric ApplicationTopological HeterostructuresOxide ElectronicsApplied PhysicsCondensed Matter PhysicsFerroelectric MaterialsFe PolarizationMultilayer HeterostructuresThin FilmsInterface Electronic StructureElectrochemistryPolarization State
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO${}_{3}$/Nb-doped SrTiO${}_{3}$, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
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