Atomic Displacements at Surface of Si-Wafer(111)

Abstract

The rod shaped distribution of X-ray scattered intensity observed from the (111) surface of Si-wafer shows asymmetry in its intensity profile with respect to the Bragg point. Such asymmetry is closely related to the lattice distortion near the crystal surface. From the analysis of the observed asymmetric intensity distribution the Si lattice plane at the interface region between the Si-wafer and the adsorbed amorphous SiO 2 layer is shown to be expanded by about 3% from the bulk spacing.