IEEE Journal of Quantum Electronics · 1985 · 144 citations · 15 references
EngineeringElectrical EngineeringOpticsOptoelectronicsPhotonicsLaser DiodesLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor LasersIntensity Change MechanismsLaser LinewidthLaser StabilityLockingQuantum Well Laser DiodesQuantum Well LasersSingle-mode Semiconductor Lasers
Measurements of the intensity of an injection locked 1.54 μm InGaAsP laser are reported. The change in intensity of the locked laser across the locking range is quite asymmetric, with a shape that agrees well with the theory of Lang. A linewidth parameter of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\alpha = 6 \pm 1</tex> was determined from the magnitude of the locking range. The injection locked laser was found to be unstable on the high frequency end of the locking range. The physical origin of this instability is explained in terms of a laser intensity change altering the phase of the laser field relative to that of the injected field.
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Theory of the linewidth of semiconductor lasers
C. H. Henry · IEEE Journal of Quantum Electronics · 1982 · 2.4K citations
A Study of Locking Phenomena in Oscillators
R. Adler · Proceedings of the IRE · 1946 · 1.6K citations
Injection locking properties of a semiconductor laser
R. Lang · IEEE Journal of Quantum Electronics · 1982 · 653 citations