Butterfly packaged high‐speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

Abstract

An edge‐coupled high‐speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at −3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high‐speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high‐speed performance at 1550nm.